?
Semiconductor Components Industries, LLC, 2006
February, 2006 ? Rev. 3
1
Publication Order Number:
MMBF4416LT1/D
MMBF4416LT1
Preferred Device
JFET VHF/UHF Amplifier
Transistor
N?Channel
Features
?
Pb?Free Package is Available
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain?Source Voltage
VDS
30
Vdc
Drain?Gate Voltage
VDG
30
Vdc
Gate?Source Voltage
VGS
30
Vdc
Gate Current
IG
10
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1) TA
= 25
°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction?to?Ambient
RJA
556
°C/W
Junction and Storage Temperature
TJ, Tstg
?55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR?5 = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
SOT?23 (TO?236)
CASE 318
STYLE 10
Device Package Shipping?
ORDERING INFORMATION
MMBF4416LT1 SOT?23 3,000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBF4416LT1G SOT?23
(Pb?Free)
3,000 / Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
1
2
3
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
M6A M
M6A = Device Code
M = Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
2 SOURCE
3
GATE
1 DRAIN
相关PDF资料
MMBF4416 IC AMP RF N-CHANNEL SOT-23
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MMBFJ310 IC SWITCH RF N-CH 25V 10MA SOT23
MMBV3401LT1 DIODE TUNING SS 35V SOT23
MMBV3700LT1G DIODE TUNING SS 200V SOT23
MMDL101T1 DIODE SCHOTTKY 7V 200MW SOD-323
MMDL301T1 DIODE SCHOTTKY 200MW 30V SOD-323
MMVL3401T1 DIODE PIN SWITCHING 35V SOD-323
相关代理商/技术参数
MMBF4416LT1G 制造商:ON Semiconductor 功能描述:TRANSISTORJFETN-Channel30V V(BR)DSS5
MMBF5103 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5103_Q 功能描述:JFET N-Ch amplifier Lo Freq/Lo Noise RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5434 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5434_Q 功能描述:JFET N-Channel Switch RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5457 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5457_Q 功能描述:JFET N-Channel Transistor General Purpose RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
MMBF5457LT1 功能描述:JFET 25V 10mA RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流(Vgs=0 时的 Idss):50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel